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| 6MBP 75RA-120 Intelligent Power Module ( R-Series ) n Maximum Ratings and Characteristics * Absolute Maximum Ratings Items DC Bus Voltage DC Bus Voltage (surge) DC Bus Voltage (short operating) Collector-Emitter Voltage Inverter Continuous Collector 1ms Current Duty=62.6% Collector Power Dissipation One Transistor Voltage of Power Supply for Driver Input Signal Voltage Input Signal Current Alarm Signal Voltage Alarm Signal Current Junction Temperature Operating Temperature Storage Temperature Isolation Voltage A.C. 1min. Screw Torque ( Tc=25C) Symbols VDC VDC(Surge) VSC VCES IC ICP -IC PC VCC VIN IIN VALM IALM Tj TOP Tstg Viso Mounting *1 Terminals *1 Ratings Max. 900 1000 800 1200 75 150 75 595 0 20 0 VZ 1 0 VCC 15 150 -20 100 -40 125 2500 3.5 3.5 Units IGBT IPM 1200V 6x75A n Outline Drawing Min. 0 0 200 0 V A W V mA V mA C V Nm Note: *1: Recommendable Value; 2.5 3.0 Nm (M5) * Electrical Characteristics of Power Circuit ( at Tj=25C, VCC=15V ) Items Collector Current At Off Signal Input Collector-Emitter Saturation Voltage Forward Voltage of FWD Symbols ICES VCE(Sat) VF Conditions VCE=1200V, Input Terminal Open IC=75A -IC=75A Min. Typ. Max. 1.0 2.6 3.0 Units mA V V INV * Electrical Characteristics of Control Circuit ( at Tj=25C, VCC=15V ) Items Current of P-Line Side Driver (One Unit) Current of N-Line Side Driver (Three Units) Input Signal Threshold Voltage Input Zener Voltage Over Heating Protection Temperature Level Hysteresis IGBT Chips Over Heating Protec. Temp. Level Hysteresis Inverter Collector Current Protection Level Over Current Detecting Time Alarm Signal Hold Time Limiting Resistor for Alarm Under Voltage Protection Level Hysteresis Symbols ICCP ICCN VIN(th) VZ TCOH TCH TjOH TjH IOC tDOC tALM RALM VUV VH Conditions fSW=0~15kHz, TC=-20~100C fSW=0~15kHz, TC=-20~100C On Off RIN=20k VDC=0V, IC=0A, Case Temp. Surface Of IGBT Chip Tj=125C Tj=25C Min. 3 10 1.00 1.25 110 20 150 20 113 1.5 1425 11.0 0.2 10 2 1500 A s ms V Typ. Max. 18 65 1.70 1.95 125 C Units mA V 1.35 1.60 8.0 1575 12.5 * Dynamic Characteristics ( at TC=Tj=125C, VCC=15V ) Items Switching Time Symbols tON tOFF tRR Conditions IC=50A, VDC=600V IF=50A, VDC=600V Min. 0.3 Typ. Max. 3.6 0.4 Units s * Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f) Conditions Inverter IGBT Diode With Thermal Compound Min. Typ. Max. 0.21 0.47 Units C/W 0.05 6MBP 75RA-120 n Equivalent Circuit IGBT IPM 1200V 6x75A Drivers include following functions A Short circuit protection circuit A Amplifier for driver A Undervoltage protection circuit A Overcurrent protection circuit A IGBT Chip overheating protection 6MBP 75RA-120 n Control Circuit Power Supply Current vs. Switching Frequency 50 T j=100C V CC= 1 7 V V CC= 1 3 V 30 2,5 IGBT IPM 1200V 6x75A Input Signal Threshold Voltage vs. Power Supply Voltage T j=25C 2,0 T j=125C V in(off) 1,5 V in(on) 1,0 [mA] Input Signal Threshold Voltage 40 CC N-Side V CC= 1 5 V Power Supply Current : I 20 V C C= 1 7 V P-Side 10 V C C= 1 5 V V C C= 1 3 V : V in(on) , V in(off) [V] 0,5 0 0 5 10 15 20 25 S w itching Frequency : fsw [kHz] 0,0 12 13 14 15 16 17 18 Power Supply Voltage : V cc [V] Under Voltage vs. Junction Temperature 14 [V] 12 [V] 10 8 6 4 2 0 20 1,0 Under Voltage Hysterisis vs. Junction Temperature 0,8 Under Voltage Hysterisis : V 40 60 80 100 120 Junction Temperature : T j [C] 140 UV H Under Voltage : V 0,6 0,4 0,2 0,0 20 40 60 80 100 120 Junction Temperature: Tj [C] 140 Alarm Hold Time vs. Power Supply Voltage 3,0 , T jOH [C] cH , T jH [C] Over Heating Characteristics T cOH , T jOH , T cH , T jH vs. V cc 200 [ms] 2,5 T j=125C 2,0 T j=25C 1,5 T jOH 150 ALM Over Heating Protection : T Alarm Hold Timen : t cOH Over Heating Hysterisis : T T cOH 100 1,0 50 0,5 T cH ,T jH 0 12 13 14 15 16 17 18 0,0 12 13 14 15 16 17 18 Power Supply Voltage : V cc [V] Power Supply Voltage : V cc [V] 6MBP 75RA-120 n Inverter C o llector Current vs. Collector-Emitter Voltage 150 T j= 2 5 C IGBT IPM 1200V 6x75A Collector Current vs. Collector-Emitter Voltage 150 T j=125C [A] C [A] V C C =17V,15V, 13V 100 V C C =17V,15V, 13V 100 C Collector Current : I Collector Current : I 50 50 0 0 1 2 3 4 C o llector-Em itter Voltage : V C E [V] 0 0 1 2 3 4 Collector-Emitter Voltage : V C E [V] Switching Time vs. Collector Current V D C =600V, V C C =15V, T j =25C Switching Time vs. Collector Current V D C =600V, V C C =15V, T j =125C , t r, t off , t f [ns] , t r, t off , t f [ns] t off 1000 t on t off t on 1000 on Switching Time : t 100 tf Switching Time : t on tf 100 10 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 Collector Current : I C [A] Collector Current : I C [A] Forward Voltage vs. Forward Current 120 35 Switching Loss vs. Collector Current V D C =600V, V C C =15V, T j=125C 100 [A] F , E off , E rr [mJ/cycle] 30 E on 25 20 15 E off 10 5 E rr 0 0 20 40 60 80 100 120 140 80 T j=125C 25C Forward Current : I 40 20 0 0 1 2 Forward Voltage : V F [V] 3 4 Switching Loss : E on 60 6MBP 75RA-120 n Inverter Transient Thermal Resistance 1050 IGBT IPM 1200V 6x75A Reverse Biased Safe Operating Area V CC =15V, T j<125C [C/W] 900 th(j-c) [A] 10 0 FWD 750 600 450 C SCSOA (non-repetitive pulse) Thermal Resistance : R 10 -1 IGBT Collector Current : I RBSOA 300 150 0 (repetitive pulse) 10 -2 10 -3 10 -2 10 -1 10 0 0 200 400 600 800 1000 1200 1400 Pulse Width : P W [sec] Collector-Emitter Voltage : V CE [V] Power Derating For IGBT 600 (per device) 200 Power Derating For FWD (per device) [W] 500 C C [W] 150 Collector Power Dissipation : P Collector Power Dissipation : P 400 300 100 200 50 100 0 0 20 40 60 80 100 120 140 160 0 0 20 40 60 80 100 120 140 160 Case Temperature : T C (C) Case Temperature : T C (C) S w itching Loss vs. Collector Current 35 V D C =600V, V C C =15V, T j=25C Switching Loss vs. Collector Current 35 V D C =300V, V C C =15V, T j=125C , E off , E rr [mJ/cycle] , E off , E rr [mJ/cycle] 30 25 20 E on 15 10 E off 5 E rr 0 0 20 40 60 80 100 120 140 Collector Current : I C [A] 30 25 20 15 E on on Switching Loss : E Switching Loss : E on E off 10 5 E rr 0 0 20 40 60 80 100 120 140 6MBP 75RA-120 n Inverter Over Current Protection vs. Junction Temperature 300 V cc =15 V IGBT IPM 1200V 6x75A oc [A] Over Current Protection Level : I 250 200 150 100 50 0 0 20 40 60 80 100 120 140 Junction Temperature: T j [C] n Outline Drawing Weight: 440g Specification is subject to change without notice October 98 |
Price & Availability of 6MBP75RA-120
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